PART |
Description |
Maker |
MTV16N50E MTV16N50E_D ON2670 MTV16N50E-D TV16N50E |
16 A, 500 V, 0.4 ohm, N-CHANNEL, Si, POWER, MOSFET From old datasheet system TMOS POWER FET 16 AMPERES 500 VOLTS RDS(on) = 0.40 OHM TMOS E-FET Power Field Effect Transistor D3PAK for Surface Mount N-Channel Enhancement - Mode Silicon Gate
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ETC Motorola, Inc ON Semiconductor
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IRF840 IRF820 IRFE430-JQR-B IRF741 IRFE210-JQR-BE4 |
8 A, 500 V, 0.85 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220 2.5 A, 500 V, 3 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220 2.5 A, 500 V, 1.725 ohm, N-CHANNEL, Si, POWER, MOSFET 10 A, 350 V, 0.55 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220 1.8 A, 200 V, 1.725 ohm, Si, POWER, MOSFET 1.2 A, 400 V, 4.15 ohm, N-CHANNEL, Si, POWER, MOSFET 3.1 A, 100 V, 0.69 ohm, N-CHANNEL, Si, POWER, MOSFET 28 A, 100 V, 0.077 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220
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SEMELAB LTD
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S4111-46Q S4111-16Q S4111-16R S4114-46Q S4114-35Q |
MOSFET, Switching; VDSS (V): 500; ID (A): 19; Pch : 35; RDS (ON) typ. (ohm) @10V: 0.325; RDS (ON) typ. (ohm) @4V[4.5V]: -; RDS (ON) typ. (ohm) @2.5V: -; Ciss (pF) typ: 1800; toff (µs) typ: 0.093; Package: TO-220FN MOSFET, Switching; VDSS (V): 500; ID (A): 25; Pch : -; RDS (ON) typ. (ohm) @10V: 0.21; RDS (ON) typ. (ohm) @4V[4.5V]: -; RDS (ON) typ. (ohm) @2.5V: -; Ciss (pF) typ: 2600; toff (µs) typ: 103; Package: TO-3P Si photodiode array 16, 35, 46 element Si photodiode array for UV to NIR 硅光电二极管阵列16356元素硅的紫外到近红外光电二极管阵
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Hamamatsu Photonics K.K.
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STW29NK50Z |
31 A, 500 V, 0.13 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247AC N-CHANNEL 500 V - 0.105ohm - 31A TO-247 Zener-Protected SuperMESH MOSFET N-CHANNEL 500 V - 0.105 Ohm - 31A TO-247 Zener-Protected SuperMESH MOSFET
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STMICROELECTRONICS[STMicroelectronics] ST Microelectronics
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IRF9620 FN2283 |
3.5A/ 200V/ 1.500 Ohm/ P-Channel Power MOSFET 3.5A, 200V, 1.500 Ohm, P-Channel Power MOSFET 3.5A 200V 1.500 Ohm P-Channel Power MOSFET From old datasheet system
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INTERSIL[Intersil Corporation]
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RFP2N20 FN2881 |
2A/ 200V/ 3.500 Ohm/ N-Channel Power MOSFET 2A 200V 3.500 Ohm N-Channel Power MOSFET From old datasheet system 2A, 200V, 3.500 Ohm, N-Channel Power MOSFET
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INTERSIL[Intersil Corporation]
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SA80 SA51 SA110 SA100 SA43 SA22 SA45A SA150A SA48A |
5.0 thru 170 volts 500 Watts Transient Voltage Suppressors 5.0 thru 170 volts 500 Watts Transient Voltage Suppressors 500 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-41 TOOL LONGNOSE ANTI-SHOCK SHEAR RES 21.5 OHM 1/16W .5% 0603 SMD
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Microsemi, Corp. MICROSEMI[Microsemi Corporation] MICROSEMI CORP-SCOTTSDALE
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S3921 S3921-512Q S3921-128Q |
NMOS linear image sensor Voltage output type with current-integration readout circuit and impedance conversion circuit MOSFET, Switching; VDSS (V): 500; ID (A): 12; Pch : 30; RDS (ON) typ. (ohm) @10V: 0.515; RDS (ON) typ. (ohm) @4V[4.5V]: -; RDS (ON) typ. (ohm) @2.5V: -; Ciss (pF) typ: 1100; toff (µs) typ: 0.077; Package: TO-220FN
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Hamamatsu Photonics
|
PHX4N50 |
3.1 A, 500 V, 1.5 ohm, N-CHANNEL, Si, POWER, MOSFET
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NXP SEMICONDUCTORS
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2SK3200 |
10 A, 500 V, 1.1 ohm, N-CHANNEL, Si, POWER, MOSFET
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SANKEN ELECTRIC CO LTD
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